Quantum interference transistor device
The transistor comprises a raised channel region between the source and drain regions. Bias voltages applied to an insulated gate formed on the raised channel region control the source-drain current by way of charge depletion and quantum interference effects in the channel region. A gate voltage mod...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The transistor comprises a raised channel region between the source and drain regions. Bias voltages applied to an insulated gate formed on the raised channel region control the source-drain current by way of charge depletion and quantum interference effects in the channel region. A gate voltage modulated potential energy barrier is thus formed whereby current in said MOS transistor is controlled. The height of the channel protrusion is greater than half of the carrier de Broglie wavelength and the width of the channel protrusion is greater than the carrier de Broglie wavelength. |
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