A semiconductor device
A semiconductor device comprises a doped substrate of a first doping polarity, a doped semiconductor material 20 of a second doping polarity, wherein the semiconductor material is on, or in, the substrate, and wherein the second doping polarity is opposite the first doping polarity such that the sem...
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| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device comprises a doped substrate of a first doping polarity, a doped semiconductor material 20 of a second doping polarity, wherein the semiconductor material is on, or in, the substrate, and wherein the second doping polarity is opposite the first doping polarity such that the semiconductor material and the substrate form a diode, an inductor 60 on or above the semiconductor material, and a well pattern 30 in the semiconductor material for reducing eddy currents. The well pattern 30 may include a trench 70 for further reduction of eddy currents from the inductor 60. The integrated device is typically used in RF-CMOS circuits and improves the quality factor (Q value). |
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