A method of forming a CVD diamond material

A method of producing a CVD diamond material which comprises providing a source gas, dissociating the source gas to produce a synthesis atmosphere which contains 300 ppb to 5 ppm nitrogen, calculated as molecular nitrogen, and allowing homoepitaxial diamond growth on a substrate surface. The substra...

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Hauptverfasser: GEOFFREY ALAN SCARSBROOK, ANDREW JOHN WHITEHEAD, HERMAN PHILIP GODFRIED, CLIVE EDWARD HALL, DANIEL JAMES TWITCHEN, EVERT HOUWMAN, PHILIP MAURICE MARTINEAU, WILHELMUS GERARDA MARIA NELISSEN
Format: Patent
Sprache:eng
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Zusammenfassung:A method of producing a CVD diamond material which comprises providing a source gas, dissociating the source gas to produce a synthesis atmosphere which contains 300 ppb to 5 ppm nitrogen, calculated as molecular nitrogen, and allowing homoepitaxial diamond growth on a substrate surface. The substrate could be a natural diamond or a HPHT synthetic diamond. The CVD diamond material is produced in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.