Isolation region for a laser-modulator device
The laser B and modulator A device sections are separated by a trench filled with selectively grown semi-insulating material 24. The semi-insulating material is Fe doped InGaAsP or AlGaInAs which comprises deep level electron traps and impedes hole current between the device regions.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The laser B and modulator A device sections are separated by a trench filled with selectively grown semi-insulating material 24. The semi-insulating material is Fe doped InGaAsP or AlGaInAs which comprises deep level electron traps and impedes hole current between the device regions. |
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