Photoluminescent radiator, semiconductor photocell and octron based thereon

The group of inventions relates to semiconductor devices generating and converting an infrared radiation a spectral range of 0.5-5 mkm. The invention is characterised in that a known photoluminescent radiator comprising an electroluminescent diode which is made of a gallium arsenide and generates an initial radiation in the wavelength range of 0.8-0.9 mkm and a polycrystalline lead selenide layer which is applied to a dielectric substrate, absorbs the initial radiation and reradiates within the wavelength range of 2-5 mkm, contains the lead selenide which additionally contains an additive directionally modifying the position of the wave length of a peak radiation, a radiation pulse build-up and decay time and an additive increasing the radiation power. A known photocell comprising a lead selenide layer arranged on a dielectric substrate which is provided with a potential barrier formed therein contains the lead selenide into which the additives similar to the additive introduced in the radiator lead selenide are added. The octron comprises the inventive radiator and photocells.