Thin film transistor array substrate

A thin film transistor (TFT) array substrate protects a thin film transistor 130 without the need for a protective film. A gate electrode 106 is connected to a gate line 102. A source electrode 108 is connected to a data line 104 crossing the gate line 102 to define a pixel area (105, fig 4). A drai...

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Bibliographische Detailangaben
Hauptverfasser:	YOUNG SEOK CHOI, HONG WOO YU, BYUNG YONG AHN, KI SUL CHO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	A thin film transistor (TFT) array substrate protects a thin film transistor 130 without the need for a protective film. A gate electrode 106 is connected to a gate line 102. A source electrode 108 is connected to a data line 104 crossing the gate line 102 to define a pixel area (105, fig 4). A drain electrode 110 is provided opposing the source electrode 108 with a channel therebetween. The channel contains a semiconductor layer 114. A pixel electrode 112 in the pixel area (105) contacts the drain electrode 110 over the entire overlapping area between the pixel electrode 112 and the drain electrode 110. A channel protective film is provided on the channel to protect the semiconductor layer 114. Methods of forming the TFT array substrate are also disclosed.