A barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer

An interconnect structure of a semiconductor device includes a tungsten plug 14 deposited in a via or contact window 11. A barrier layer 15 separates the tungsten plug 14 from the surface of a dielectric material 16 within which the contact window or via 11 is formed. The barrier layer 15 is a compo...

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Bibliographische Detailangaben
Hauptverfasser:	SAILESH MANSINH MERCHANT, SIDDHARTHA BHOWMIK, DARRELL L SIMPSON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	An interconnect structure of a semiconductor device includes a tungsten plug 14 deposited in a via or contact window 11. A barrier layer 15 separates the tungsten plug 14 from the surface of a dielectric material 16 within which the contact window or via 11 is formed. The barrier layer 15 is a composite of at least two films. A tungsten silicide film 12 is formed on the surface of the dielectric material 16 within the via, and a tungsten film 13 is formed on the tungsten silicide film 12. A tungsten plug 14 is formed on the tungsten film 13. The barrier layer is deposited using a sputtering technique performed in a deposition chamber. The chamber includes tungsten silicide target (19, fig 6) from which the tungsten silicide film 12 is deposited, and a tungsten coil (20, fig 6) from which the tungsten film 13 is deposited.