Attenuating structures for integrated optical devices

An integrated optical device has a a waveguide 18 whose optical mode 22 is modulated by a PIN diode defined across the waveguide, the diode being defined by an area of p-type doping, 24 to one side of the waveguide and n-type doping 26 to the other, the separation of the n-type doping from the waveg...

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Bibliographische Detailangaben
1. Verfasser:	IAN EDWARD DAY
Format:	Patent
Sprache:	eng
Schlagworte:	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	An integrated optical device has a a waveguide 18 whose optical mode 22 is modulated by a PIN diode defined across the waveguide, the diode being defined by an area of p-type doping, 24 to one side of the waveguide and n-type doping 26 to the other, the separation of the n-type doping from the waveguide, 30 being greater than the separation of the p-type doping from the waveguide 28. It is preferable for the n-type diode rule to be at least 1.5 times the p-type diode rule, and more preferably at least twice. In this way, the best advantage of the effect is obtained. A ratio of between three and four times offers the best results. A ratio of four times, or a total n-type and p-type diode rule of less than 40žm is preferred in order to limit the size of the intrinsic region and hence its resistance.