High resistivity carbide or nitride film for four transistor static random access memory structures (4T SRAM)

A method of manufacturing a resistor for a four transistor static random access memory (4T SRAM) structure (100, Fig. 1) is disclosed. The method comprises forming dielectric layer (230) over active region (210) of semiconductor (205), forming resistive layer (340) on dielectric layer (230) and connecting active region (210) to resistive layer (340) through an interconnect structure (235, 435, 445). Resistive layer (340) includes a compound with a first element from group III or group IV and a second element from group IV or group V, e.g. silicon carbide or gallium nitride. The resistive layer (340) may be amorphous, and may be formed by physical vapour deposition. The resistor may be connected to transistor structure (200, Fig. 2) with source (215), drain (216) and gate (220) with dielectric (225).