Method of forming lithographic pattern

Method of forming a lithographic pattern comprising establishing a charged particle beam of electrons or ions from which charged particles having energies outside the range 0.1 to 5 eV are isolated and removed by using eg a Wien filter. The beam is focused by means 2 until a divergence value of betw...

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Bibliographische Detailangaben
Hauptverfasser:	DMITRY IOSIFIVICH DOLGY, YAROSLAV IGOREVICH SHTROMBAKH, BORIS ARONOVICH ARONZON, EVGENY ZALMANOVICH MEILIKHOV, EVGENY PETROVICH RYAZANTSEV, EVGENY DMITRIEVICH OLSHANSKY, EVGENIA ANATOLIEVNA KULESHOVA, VLADIMIR VASILIEVICH RYLKOV, EVGENY PAVLOVICH VELIKHOV, KIRILL EVGENIEVICH PRIKHODKO, ALEXANDR GRIGORIEVICH DOMANTOVSKY
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	Method of forming a lithographic pattern comprising establishing a charged particle beam of electrons or ions from which charged particles having energies outside the range 0.1 to 5 eV are isolated and removed by using eg a Wien filter. The beam is focused by means 2 until a divergence value of between 5 x 10-2 and 10-4 rad is obtained. The beam is passed through a mask 3 stencilled with a pattern and focused with secondary focusing means 4 so that a lithographic pattern is formed on the radiation-sensitive layer 5. Layer 5 may be formed of oxides, hydrides or nitrides of metals. The method improves resolution of the pattern by reducing spherical and chromatic abberation.