Cleaning composition and method of manufacturing Semiconductor devices

The cleaning composition comprises the mixture of 0.01 to 10 weight percent of HF, 1 to 10 weight percent of H2O2, 0.01 to 30 weight percent of IPA, and remaining percent of H2O. The method of manufacturing semiconductor devices comprises the steps of: a) forming the lower storage electrode of a capacitor by patterning after depositing a first conductive material 14 on an insulating film 12 of a semiconductor substrate having contact holes formed thereon; b) undercutting some portion of the insulating film of the lower electrode using such a cleaning composition and the pattern of the lower electrode as an etching mask, and, at the same time, cleaning the exposed surface of the lower electrode; and c) forming a dielectric film on the exposed surface of the lower electrode. Undercutting the lower storage electrode increases the surface area available for the formation of hemispherical grained silicon. Accordingly, the surface area and the storage capacity of the storage electrode is increased.