Resistor fabrication

Resistor fabrication

The fabrication of a resistor structure is described. A resistive region (103) is formed over the top of a substrate (106). Trenches are formed from the top side of the substrate in scribe line regions where the wafer is to be separated to form resistor modules. Contact layers (141,142) are formed o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HECTOR FLORES, JOHN G RICHARDS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESISTORS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The fabrication of a resistor structure is described. A resistive region (103) is formed over the top of a substrate (106). Trenches are formed from the top side of the substrate in scribe line regions where the wafer is to be separated to form resistor modules. Contact layers (141,142) are formed over the top side of the substrate (106) and are electrically coupled to each end of the resistive region (103), respectively. The contact layers (141,142) are also formed over the sidewalls of the trenches. the wafer is separated through the trenches, creating resistor modules having sidewall contact regions.