A method of manufacturing a semiconductor device with aluminium wiring

The invention provides a method of manufacturing a semiconductor device e.g. a DRAM. The method comprises etching and patterning, using a gas containing chlorine, a conductive film 20 which is made of aluminium or aluminium alloy, deposited on the surface of an insulating film formed on a substrate...

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Bibliographische Detailangaben
Hauptverfasser:	TETSUO KONDO, KATSUNORI SHIMIZU, YASUSHIGE ABE, FUMIHIKO AKABOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention provides a method of manufacturing a semiconductor device e.g. a DRAM. The method comprises etching and patterning, using a gas containing chlorine, a conductive film 20 which is made of aluminium or aluminium alloy, deposited on the surface of an insulating film formed on a substrate 10. The substrate and the conductive film are exposed to a reaction solution, containing a metal, such as silver or lead e.g. silver nitrate, which is capable of reacting with chlorine and forming a metal chloride having a small solubility product. The reaction of chlorine with the metal prevents it from corroding the aluminium-containing conductive film 20.