Semiconductor etching process

A process for plasma etching a compound semiconductor heterostructure, e.g. to fabricate a ridge laser on a wavelength demultiplexer comprises anisotropic etching of the semiconductor by exposure to a plasma incorporating methane, hydrogen and oxygen. The oxygen content of the plasma is derived from...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SURESHCHANDRA MISHRILAL OJHA, STEVEN JOHN CLEMENTS
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A process for plasma etching a compound semiconductor heterostructure, e.g. to fabricate a ridge laser on a wavelength demultiplexer comprises anisotropic etching of the semiconductor by exposure to a plasma incorporating methane, hydrogen and oxygen. The oxygen content of the plasma is derived from a gaseous precursor such as carbon dioxide or nitrous oxide.