Methods of forming an interconnect on a semiconductor substrate

In a method of forming an interconnect channel within a. semiconductor device, a first dielectric layer 22, 23 is deposited over a semiconductor substrate 20 and patterned to form a contact opening that is subsequently filled with a contact plug 40, 41. A second dielectric layer 50 is deposited over...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DONALD S GARDNER, XIAOUN MU, SRINIVASAN SIVARAM, DAVID B FRASER
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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