Improvements in materials

A boron trioxide material having a softening point of less than 350 DEG C and a rate of softening exceeding 100 mu m/m/ DEG C above 360 DEG C is especially suitable as an encapsulant for semiconductor crystal drawing.

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	RODERICK GORDON LESTER BARNES
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A boron trioxide material having a softening point of less than 350 DEG C and a rate of softening exceeding 100 mu m/m/ DEG C above 360 DEG C is especially suitable as an encapsulant for semiconductor crystal drawing.