SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE SAME

A semiconductor device, preferably a bipolar CMOS device such as a bipolar transistor, comprising an emitter (36) and a collector (34) with an oxide region (32) therebetween, is provided with a collector shunt (26) in the form of a high concentration diffused implant below the oxide region (32), the...

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Bibliographische Detailangaben
1. Verfasser: PETER FRED BLOMLEY
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor device, preferably a bipolar CMOS device such as a bipolar transistor, comprising an emitter (36) and a collector (34) with an oxide region (32) therebetween, is provided with a collector shunt (26) in the form of a high concentration diffused implant below the oxide region (32), thereby to reduce the resistance of the emitter-to-collector path. The implant may be of phosphorous and/or arsenic. In a process for manufacturing such a device, silicon nitride is deposited on the well surface to define the boundary of the area for the shunt implant.