VACUUM DEPOSITION PROCESS

PCT No. PCT/GB88/01126 Sec. 371 Date Sep. 5, 1989 Sec. 102(e) Date Sep. 5, 1989 PCT Filed Dec. 16, 1988 PCT Pub. No. WO89/05872 PCT Pub. Date Jun. 29, 1989.In order to deposit films of materials, such as polysilicon or silicon dioxide, on major surfaces of substrates by a low-pressure chemical vapor...

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1. Verfasser:	DOUGLAS BOYD MEAKIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PCT No. PCT/GB88/01126 Sec. 371 Date Sep. 5, 1989 Sec. 102(e) Date Sep. 5, 1989 PCT Filed Dec. 16, 1988 PCT Pub. No. WO89/05872 PCT Pub. Date Jun. 29, 1989.In order to deposit films of materials, such as polysilicon or silicon dioxide, on major surfaces of substrates by a low-pressure chemical vapor deposition (LPCVD) process, gas, such as a silane gas, is admitted to a chamber at one end and is pumped through the chamber by a pump. The substrates are mounted such that the general direction of gas flow is perpendicular to the substrate major surface, and are heated to cause reaction of the gas to form the required film. In order to achieve uniformity of the deposited films over a number of substrates, the pressure in the deposition chamber is maintained below 10m Torr.