I.R. PHOTODETECTOR INCORPORATING EPITAXIAL C.M.T

I.R. PHOTODETECTOR INCORPORATING EPITAXIAL C.M.T

A cadmium mercury telluride (C.M.T.) layer (5) is epitaxially grown on a substrate (1, 2) of, for example, cadmium telluride. The substrate (3) is subsequently etched away with a mixture of nitric, hydrofluoric and lactic acids. A thin barrier layer (3) of mercury telluride is provided which is not...

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Bibliographische Detailangaben
Hauptverfasser: MALCOLM JOHN BEVAN, MICHAEL JAMES HYLIANDS, LINDA KAY NICHOLSON, SURENDRA PRATAP SINGH, ANDREW WILLIAM GURNELL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A cadmium mercury telluride (C.M.T.) layer (5) is epitaxially grown on a substrate (1, 2) of, for example, cadmium telluride. The substrate (3) is subsequently etched away with a mixture of nitric, hydrofluoric and lactic acids. A thin barrier layer (3) of mercury telluride is provided which is not attacked by the above etching solution. This barrier layer is removed by polishing to leave an optically flat C.M.T. layer which may incorporate a cadmium telluride passivating layer on its surface.