Method of forming silicon film on substrate in plasma atmosphere

In depositing a silicon film on a heated substrate from a reactant gas in plasma state, a fluorosilane having at least one hydrogen atom such as, e.g., SiH3F, SiH2F2 or Si2H4F2 is used as at least a portion of the reactant gas. Together with such a partially fluorinated silane, the reactant gas may...

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Bibliographische Detailangaben
Hauptverfasser:	AKIHISA MATSUDA, MAOMICHI KITSUGI, KAZUNOBU TANAKA, KIYOSHI YAGII, MAKOTO TODA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	In depositing a silicon film on a heated substrate from a reactant gas in plasma state, a fluorosilane having at least one hydrogen atom such as, e.g., SiH3F, SiH2F2 or Si2H4F2 is used as at least a portion of the reactant gas. Together with such a partially fluorinated silane, the reactant gas may contain hydrogen, unsubstituted silane, tetrafluoromonosilane or an inert gas. Partially fluorinated silanes are safer than unsubstituted silanes and are advantageous over tetrafluoromonosilane in respect of the rate of growth of the silicon film.