Improvements in or relating to circuit arrangements including an insulated gate field effect transistor

1,110,318. Transistor switching circuits. ASSOCIATED SEMICONDUCTOR MANUFACTURERS Ltd. 11 March, 1966 [26 March, 1965], No. 12934/65. Heading H3T. An insulated gate field effect transistor is switched by means of a signal applied between its substrate and source electrodes. In the bi-stable circuit shown, employing two crosscoupled transistors, preferably MOSTS, a forward bias is applied between the drain and source and a reverse bias between the substrate and source of each transistor. By applying a signal to the substrate of the non-conducting transistor such as to reduce its reverse bias, that transistor becomes conductive, thus causing the state of the bi-stable circuit to be changed.