DISPOSITIFS METAL-OXYDE-SEMICONDUCTEUR (MOS) A PLUS GRAND POURTOUR DE CANAUX ET PROCEDES DE FABRICATION

DISPOSITIFS METAL-OXYDE-SEMICONDUCTEUR (MOS) A PLUS GRAND POURTOUR DE CANAUX ET PROCEDES DE FABRICATION

A semiconductor device includes a drift layer disposed on a substrate. The drift layer has a non-planar surface having a plurality of repeating features oriented parallel to a length of a channel of the semiconductor device. Further, each the repeating features have a dopant concentration higher tha...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BOLOTNIKOV, ALEXANDER VIKTOROVICH, LOSEE, PETER ALMREN
Format: Patent
Sprache:fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a drift layer disposed on a substrate. The drift layer has a non-planar surface having a plurality of repeating features oriented parallel to a length of a channel of the semiconductor device. Further, each the repeating features have a dopant concentration higher than a remainder of the drift layer.