PROCÉDÉS DE FORMATION DE MATÉRIAUX SEMI-CONDUCTEURS III/IV ET STRUCTURES SEMI-CONDUCTRICES FORMÉES EN UTILISANT CES PROCÉDÉS
Des procédés de formation de matériaux de nitrure III ternaire consistent à développer de manière épitaxiale un matériau de nitrure III ternaire sur un substrat dans une chambre. La croissance épitaxiale consiste à fournir un mélange de gaz précurseurs dans la chambre qui comprend un rapport relativ...
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| creator | FIGUET, CHRISTOPHE TOMASINI, PIERRE |
| description | Des procédés de formation de matériaux de nitrure III ternaire consistent à développer de manière épitaxiale un matériau de nitrure III ternaire sur un substrat dans une chambre. La croissance épitaxiale consiste à fournir un mélange de gaz précurseurs dans la chambre qui comprend un rapport relativement élevé entre une pression partielle d'un précurseur d'azote et une pression partielle d'un ou de plusieurs précurseurs de groupe III dans la chambre. Du fait au moins en partie du rapport relativement élevé, la couche de matériau de nitrure III ternaire peut être développée en une grande épaisseur finale avec de petits défauts de creux en V dans celle-ci. Des structures semi-conductrices comprenant ces couches de matériau de nitrure III ternaire sont fabriquées en utilisant ces procédés.
Forming indium gallium nitride (InGaN) comprises providing a layer of gallium nitride (GaN) within a chamber; epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising providing a precursor gas mixture within the chamber; selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor; formulating the precursor gas mixture; and decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN; and growing the layer of InGaN. Forming indium gallium nitride (InGaN) comprises providing a layer of gallium nitride (GaN) within a chamber; epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising providing a precursor gas mixture within the chamber; selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor; formulating the precursor gas mixture to cause a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the one or more Group III precursors within the chamber to be at least about 5600; and decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN; and growing the layer of InGaN to an average final thickness greater than about one hundred nanometers (100 nm) and less than a critical thickness of the layer of InGaN. An independent claim is a semiconductor structure comprising a ternary III-nitride material comprising nitrogen, gallium, and at least one of indium and aluminum, the ternary III-nitride material formed by a me |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_FR2972731B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>FR2972731B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_FR2972731B13</originalsourceid><addsrcrecordid>eNqNTT0KwjAU7uIg6h3eBYq0HYpjTV_xgU3kJSlupUicRAv1BG45Vy5mCoK4OX2_fN8yeZ1YieDr4DXUCI3itjKk5CwiC56psmfQ2FIqlKytMGhZAxFtqQM0oA1H0zLqnxaTiM68F3wkKMEaOpKupIE5-f6uk8V1uE1u88FVAg0acUjd-OjdNA4Xd3fPvuF8V-Zlke2z4o_KG04_QUk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PROCÉDÉS DE FORMATION DE MATÉRIAUX SEMI-CONDUCTEURS III/IV ET STRUCTURES SEMI-CONDUCTRICES FORMÉES EN UTILISANT CES PROCÉDÉS</title><source>esp@cenet</source><creator>FIGUET, CHRISTOPHE ; TOMASINI, PIERRE</creator><creatorcontrib>FIGUET, CHRISTOPHE ; TOMASINI, PIERRE</creatorcontrib><description>Des procédés de formation de matériaux de nitrure III ternaire consistent à développer de manière épitaxiale un matériau de nitrure III ternaire sur un substrat dans une chambre. La croissance épitaxiale consiste à fournir un mélange de gaz précurseurs dans la chambre qui comprend un rapport relativement élevé entre une pression partielle d'un précurseur d'azote et une pression partielle d'un ou de plusieurs précurseurs de groupe III dans la chambre. Du fait au moins en partie du rapport relativement élevé, la couche de matériau de nitrure III ternaire peut être développée en une grande épaisseur finale avec de petits défauts de creux en V dans celle-ci. Des structures semi-conductrices comprenant ces couches de matériau de nitrure III ternaire sont fabriquées en utilisant ces procédés.
Forming indium gallium nitride (InGaN) comprises providing a layer of gallium nitride (GaN) within a chamber; epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising providing a precursor gas mixture within the chamber; selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor; formulating the precursor gas mixture; and decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN; and growing the layer of InGaN. Forming indium gallium nitride (InGaN) comprises providing a layer of gallium nitride (GaN) within a chamber; epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising providing a precursor gas mixture within the chamber; selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor; formulating the precursor gas mixture to cause a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the one or more Group III precursors within the chamber to be at least about 5600; and decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN; and growing the layer of InGaN to an average final thickness greater than about one hundred nanometers (100 nm) and less than a critical thickness of the layer of InGaN. An independent claim is a semiconductor structure comprising a ternary III-nitride material comprising nitrogen, gallium, and at least one of indium and aluminum, the ternary III-nitride material formed by a method comprising providing a substrate comprising a binary III-nitride material within a chamber; and epitaxially growing a layer of ternary III-nitride material on the binary III-nitride material, comprising providing a precursor gas mixture within the chamber, the precursor gas mixture comprising a nitrogen precursor and two or more Group III precursors; formulating the precursor gas mixture such that a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the two or more Group III precursors within the chamber is at least about 5600; and decomposing the nitrogen precursor and the two or more Group III precursors in the chamber; where the fully-grown layer of ternary III-nitride material has an average final thickness greater than about one hundred nanometers (100 nm) and less than a critical thickness of the layer of InGaN; where a relaxed lattice parameter mismatch between the fully-grown layer of ternary III-nitride material and the binary III-nitride material is at least about 0.5% of the relaxed average lattice parameter of the binary III-nitride material; and where the fully-grown layer of ternary III-nitride material comprises V-pits having an average pit width of about two hundred nanometers (200 nm) or less.</description><language>fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201002&DB=EPODOC&CC=FR&NR=2972731B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201002&DB=EPODOC&CC=FR&NR=2972731B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FIGUET, CHRISTOPHE</creatorcontrib><creatorcontrib>TOMASINI, PIERRE</creatorcontrib><title>PROCÉDÉS DE FORMATION DE MATÉRIAUX SEMI-CONDUCTEURS III/IV ET STRUCTURES SEMI-CONDUCTRICES FORMÉES EN UTILISANT CES PROCÉDÉS</title><description>Des procédés de formation de matériaux de nitrure III ternaire consistent à développer de manière épitaxiale un matériau de nitrure III ternaire sur un substrat dans une chambre. La croissance épitaxiale consiste à fournir un mélange de gaz précurseurs dans la chambre qui comprend un rapport relativement élevé entre une pression partielle d'un précurseur d'azote et une pression partielle d'un ou de plusieurs précurseurs de groupe III dans la chambre. Du fait au moins en partie du rapport relativement élevé, la couche de matériau de nitrure III ternaire peut être développée en une grande épaisseur finale avec de petits défauts de creux en V dans celle-ci. Des structures semi-conductrices comprenant ces couches de matériau de nitrure III ternaire sont fabriquées en utilisant ces procédés.
Forming indium gallium nitride (InGaN) comprises providing a layer of gallium nitride (GaN) within a chamber; epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising providing a precursor gas mixture within the chamber; selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor; formulating the precursor gas mixture; and decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN; and growing the layer of InGaN. Forming indium gallium nitride (InGaN) comprises providing a layer of gallium nitride (GaN) within a chamber; epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising providing a precursor gas mixture within the chamber; selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor; formulating the precursor gas mixture to cause a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the one or more Group III precursors within the chamber to be at least about 5600; and decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN; and growing the layer of InGaN to an average final thickness greater than about one hundred nanometers (100 nm) and less than a critical thickness of the layer of InGaN. An independent claim is a semiconductor structure comprising a ternary III-nitride material comprising nitrogen, gallium, and at least one of indium and aluminum, the ternary III-nitride material formed by a method comprising providing a substrate comprising a binary III-nitride material within a chamber; and epitaxially growing a layer of ternary III-nitride material on the binary III-nitride material, comprising providing a precursor gas mixture within the chamber, the precursor gas mixture comprising a nitrogen precursor and two or more Group III precursors; formulating the precursor gas mixture such that a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the two or more Group III precursors within the chamber is at least about 5600; and decomposing the nitrogen precursor and the two or more Group III precursors in the chamber; where the fully-grown layer of ternary III-nitride material has an average final thickness greater than about one hundred nanometers (100 nm) and less than a critical thickness of the layer of InGaN; where a relaxed lattice parameter mismatch between the fully-grown layer of ternary III-nitride material and the binary III-nitride material is at least about 0.5% of the relaxed average lattice parameter of the binary III-nitride material; and where the fully-grown layer of ternary III-nitride material comprises V-pits having an average pit width of about two hundred nanometers (200 nm) or less.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNTT0KwjAU7uIg6h3eBYq0HYpjTV_xgU3kJSlupUicRAv1BG45Vy5mCoK4OX2_fN8yeZ1YieDr4DXUCI3itjKk5CwiC56psmfQ2FIqlKytMGhZAxFtqQM0oA1H0zLqnxaTiM68F3wkKMEaOpKupIE5-f6uk8V1uE1u88FVAg0acUjd-OjdNA4Xd3fPvuF8V-Zlke2z4o_KG04_QUk</recordid><startdate>20201002</startdate><enddate>20201002</enddate><creator>FIGUET, CHRISTOPHE</creator><creator>TOMASINI, PIERRE</creator><scope>EVB</scope></search><sort><creationdate>20201002</creationdate><title>PROCÉDÉS DE FORMATION DE MATÉRIAUX SEMI-CONDUCTEURS III/IV ET STRUCTURES SEMI-CONDUCTRICES FORMÉES EN UTILISANT CES PROCÉDÉS</title><author>FIGUET, CHRISTOPHE ; TOMASINI, PIERRE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_FR2972731B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>fre</language><creationdate>2020</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>FIGUET, CHRISTOPHE</creatorcontrib><creatorcontrib>TOMASINI, PIERRE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FIGUET, CHRISTOPHE</au><au>TOMASINI, PIERRE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROCÉDÉS DE FORMATION DE MATÉRIAUX SEMI-CONDUCTEURS III/IV ET STRUCTURES SEMI-CONDUCTRICES FORMÉES EN UTILISANT CES PROCÉDÉS</title><date>2020-10-02</date><risdate>2020</risdate><abstract>Des procédés de formation de matériaux de nitrure III ternaire consistent à développer de manière épitaxiale un matériau de nitrure III ternaire sur un substrat dans une chambre. La croissance épitaxiale consiste à fournir un mélange de gaz précurseurs dans la chambre qui comprend un rapport relativement élevé entre une pression partielle d'un précurseur d'azote et une pression partielle d'un ou de plusieurs précurseurs de groupe III dans la chambre. Du fait au moins en partie du rapport relativement élevé, la couche de matériau de nitrure III ternaire peut être développée en une grande épaisseur finale avec de petits défauts de creux en V dans celle-ci. Des structures semi-conductrices comprenant ces couches de matériau de nitrure III ternaire sont fabriquées en utilisant ces procédés.
Forming indium gallium nitride (InGaN) comprises providing a layer of gallium nitride (GaN) within a chamber; epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising providing a precursor gas mixture within the chamber; selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor; formulating the precursor gas mixture; and decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN; and growing the layer of InGaN. Forming indium gallium nitride (InGaN) comprises providing a layer of gallium nitride (GaN) within a chamber; epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising providing a precursor gas mixture within the chamber; selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor; formulating the precursor gas mixture to cause a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the one or more Group III precursors within the chamber to be at least about 5600; and decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN; and growing the layer of InGaN to an average final thickness greater than about one hundred nanometers (100 nm) and less than a critical thickness of the layer of InGaN. An independent claim is a semiconductor structure comprising a ternary III-nitride material comprising nitrogen, gallium, and at least one of indium and aluminum, the ternary III-nitride material formed by a method comprising providing a substrate comprising a binary III-nitride material within a chamber; and epitaxially growing a layer of ternary III-nitride material on the binary III-nitride material, comprising providing a precursor gas mixture within the chamber, the precursor gas mixture comprising a nitrogen precursor and two or more Group III precursors; formulating the precursor gas mixture such that a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the two or more Group III precursors within the chamber is at least about 5600; and decomposing the nitrogen precursor and the two or more Group III precursors in the chamber; where the fully-grown layer of ternary III-nitride material has an average final thickness greater than about one hundred nanometers (100 nm) and less than a critical thickness of the layer of InGaN; where a relaxed lattice parameter mismatch between the fully-grown layer of ternary III-nitride material and the binary III-nitride material is at least about 0.5% of the relaxed average lattice parameter of the binary III-nitride material; and where the fully-grown layer of ternary III-nitride material comprises V-pits having an average pit width of about two hundred nanometers (200 nm) or less.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PROCÉDÉS DE FORMATION DE MATÉRIAUX SEMI-CONDUCTEURS III/IV ET STRUCTURES SEMI-CONDUCTRICES FORMÉES EN UTILISANT CES PROCÉDÉS |
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