PROCEDE DE DETOURAGE PROGRESSIF

The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a firs...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MIGETTE MARION, MOLINARI SEBASTIEN, BROEKAART MARCEL, NEYRET ERIC
Format:	Patent
Sprache:	fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!