PROCEDE DE DETOURAGE PROGRESSIF

PROCEDE DE DETOURAGE PROGRESSIF

The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a firs...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MIGETTE MARION, MOLINARI SEBASTIEN, BROEKAART MARCEL, NEYRET ERIC
Format: Patent
Sprache:fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width.