PROCEDE DE FABRICATION DE STRUCTURES SEMICONDUCTRICES UTILES POUR LA REALISATION DE SUBSTRATS SEMICONDUCTEUR- SUR-ISOLANT, ET SES APPLICATIONS

The method involves providing a silicon substrate (SI) with front and rear faces (1a, 1b), and depositing a thick germanium layer, a silicon-germanium layer or a silicon-germanium virtual substrate (22) on the front face of the substrate. Layers that generate bending constraints are deposited on the rear face of the substrate, where constraints that generate the layers include bending constraints acting on the front face of the substrate. The thick germanium layer is deposited on the front face of the substrate by epitaxy. An independent claim is also included for a method for fabricating a semi-conductor substrate.