Front and rear surfaces three dimensional electrical connection forming method for e.g. silicon substrate, involves engraving lines and trenches, and realising metallization of walls of lines and base of trenches on surfaces by layers
The method involves engraving lines (8, 8`) i.e. conductor lines, in a substrate (2) e.g. silicon substrate, from a rear surface (6), and conductor trenches (10, 10`) through the surface, where the lines are opened in the trenches. A metallization of walls of the lines and a base of the trenches is...
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| Format: | Patent |
| Sprache: | eng ; fre |
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| Zusammenfassung: | The method involves engraving lines (8, 8`) i.e. conductor lines, in a substrate (2) e.g. silicon substrate, from a rear surface (6), and conductor trenches (10, 10`) through the surface, where the lines are opened in the trenches. A metallization of walls of the lines and a base of the trenches is realized on a front surface (4) and the rear surface of the substrate by respective metallization layers (14, 14`). Insulation layers (16, 16`) of the lines and the trenches are formed by chemical vapor deposition of silicon dioxide and silicon nitride.
L'invention concerne un procédé de réalisation d'une connexion électrique dans un substrat ou un composant (2) présentant une face avant et (4) et une face arrière (6), comportant:a) une gravure d'au moins un via (8, 8') dans le substrat, depuis la face arrière, et d'au moins une tranchée (10, 10') par la face arrière,b) la métallisation (14, 14') d'au moins les parois du via et du fond de la tranchée. |
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