Formation of a dielectric layer on a carrier material by circulating a metal precursor gas with two stages of oxidation, notably for the realization of a condenser in an integrated circuit

The formation of a layer of dielectric material on a carrier material (31) comprises: (A) circulating, in contact with the carrier material, a gas mixture (16) containing a precursor of a metal then an oxidizing gas (17) in conditions to form a first dielectric layer (32a); (B) circulating, in conta...

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Bibliographische Detailangaben
Hauptverfasser:	GROS MICHAEL, WYON CHRISTOPHE, DELOFFRE EMILIE
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The formation of a layer of dielectric material on a carrier material (31) comprises: (A) circulating, in contact with the carrier material, a gas mixture (16) containing a precursor of a metal then an oxidizing gas (17) in conditions to form a first dielectric layer (32a); (B) circulating, in contact with the first dielectric layer, a gas mixture containing the precursor in second more intensely oxidizing conditions than that of the first operation. Independent claims are also included for: (1) a layer made up of at least one dielectric material obtained by this method; (2) an integrated circuit incorporating a condenser including this dielectric layer. La présente invention concerne un procédé de formation d'une couche 32 constituée d'au moins un matériau diélectrique sur un matériau porteur 31, dans lequel :- on fait circuler au contact dudit matériau porteur 31 un mélange gazeux 16 contenant au moins un précurseur comprenant un élément métallique et un gaz oxydant 17 dans de premières conditions oxydantes de façon à former une première couche 32a constituée d'au moins un matériau diélectrique, et- on fait circuler, au contact de ladite première couche 32a, un mélange gazeux 16 contenant ledit précurseur dans de deuxièmes conditions oxydantes, lesdites deuxièmes conditions oxydantes étant plus oxydantes que lesdites première conditions oxydantes.