Dielectric layer with weak dielectric constant useful to separate metal interconnections in integrated circuits, comprises carbon-doped silicon and/or carbon-doped silicon oxide, obtained from a precursor comprising a silicon-carbon chain

Dielectric layer (A) with weak dielectric constant and usable to separate the metal interconnections in particular during the manufacture of integrated circuits, comprises carbon-doped silicon (SiC) and/or carbon-doped silicon oxide (SiOC), obtained from a precursor comprising a silicon-carbon chain...

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