Dielectric layer with weak dielectric constant useful to separate metal interconnections in integrated circuits, comprises carbon-doped silicon and/or carbon-doped silicon oxide, obtained from a precursor comprising a silicon-carbon chain

Dielectric layer (A) with weak dielectric constant and usable to separate the metal interconnections in particular during the manufacture of integrated circuits, comprises carbon-doped silicon (SiC) and/or carbon-doped silicon oxide (SiOC), obtained from a precursor comprising a silicon-carbon chain (L). Dielectric layer (A) with weak dielectric constant and usable to separate the metal interconnections in particular during the manufacture of integrated circuits, comprises carbon-doped silicon (SiC) and/or carbon-doped silicon oxide (SiOC), obtained from a precursor comprising a silicon-carbon chain (L) of formula -Si-C n-Si (where n is =n). Independent claims are included for: (1) a precursor molecule, particularly of carbon-doped silicon and/or carbon-doped silicon oxide of formula (VI); and (2) the preparation the dielectric layer. [Image]. La présente invention concerne des couches diélectriques à faible constante diélectrique et utilisables pour séparer des interconnexions métalliques notamment 1 ors de la fabrication de circuits intégrés (dans la partie dite BEOL du circuit). Selon l'invention, la couche diélectrique comporte du SiC et/ou du SiOC, et est obtenue à partir d'au moins un précurseur comportant au moins une chaîne -Si-Cn-Si avec n>=1.