Deposition of a film with a high dielectric constant using tetrakis(ethylamino)silane as the silicon source, for the fabrication of MOS type field effect transistors
Deposition of a film with a high dielectric constant from tetrakis(ethylamino)silane (TEAS) acting as the source of silicon is carried out with the aid of a chemical vapour deposition (CVD) or ALD process, by injection of a metal precursor, an oxidising source and TEAS in conditions of duration, tem...
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| creator | DUSSARAT CHRISTIAN |
| description | Deposition of a film with a high dielectric constant from tetrakis(ethylamino)silane (TEAS) acting as the source of silicon is carried out with the aid of a chemical vapour deposition (CVD) or ALD process, by injection of a metal precursor, an oxidising source and TEAS in conditions of duration, temperature and pressure such that the reactivity of the silicon source is augmented.
Selon l'invention on réalise l'injection d'un précurseur métallique de type MX4 ou MX5, M étant de préférence du Hafnium, d'un oxydant (notamment H2O) et du TEAS (comme source de silicium), dans des conditions de température, de pression et de ratio entre ces différents composés tels que la réactivité de la source de silicium est augmentée. |
| format | Patent |
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Selon l'invention on réalise l'injection d'un précurseur métallique de type MX4 ou MX5, M étant de préférence du Hafnium, d'un oxydant (notamment H2O) et du TEAS (comme source de silicium), dans des conditions de température, de pression et de ratio entre ces différents composés tels que la réactivité de la source de silicium est augmentée.</description><edition>7</edition><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051209&DB=EPODOC&CC=FR&NR=2871292A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051209&DB=EPODOC&CC=FR&NR=2871292A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DUSSARAT CHRISTIAN</creatorcontrib><title>Deposition of a film with a high dielectric constant using tetrakis(ethylamino)silane as the silicon source, for the fabrication of MOS type field effect transistors</title><description>Deposition of a film with a high dielectric constant from tetrakis(ethylamino)silane (TEAS) acting as the source of silicon is carried out with the aid of a chemical vapour deposition (CVD) or ALD process, by injection of a metal precursor, an oxidising source and TEAS in conditions of duration, temperature and pressure such that the reactivity of the silicon source is augmented.
Selon l'invention on réalise l'injection d'un précurseur métallique de type MX4 ou MX5, M étant de préférence du Hafnium, d'un oxydant (notamment H2O) et du TEAS (comme source de silicium), dans des conditions de température, de pression et de ratio entre ces différents composés tels que la réactivité de la source de silicium est augmentée.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjsFOgkEMhP-LB6K-wxwxwQO_B_VIBMLFmIB3Upcu27js_tmWGB7I97QheOfU6aQzX0fd75yHqmJSC2oEIUo-4EcsuU6yT9gJZw7WJCDUokbFcFQpexhbo2_RMVs6ZTpIqQ8qmQqDFJYYvomHoPXYAk8Qazv7kb68j_6p7x8b2Glw31k7cIwOhJcXFbXa9K67iZSV7y_ztsNy8fm2evTnt6wDBS5s2-W6f3me9q_9bPp0xckfI6hWdw</recordid><startdate>20051209</startdate><enddate>20051209</enddate><creator>DUSSARAT CHRISTIAN</creator><scope>EVB</scope></search><sort><creationdate>20051209</creationdate><title>Deposition of a film with a high dielectric constant using tetrakis(ethylamino)silane as the silicon source, for the fabrication of MOS type field effect transistors</title><author>DUSSARAT CHRISTIAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_FR2871292A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DUSSARAT CHRISTIAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DUSSARAT CHRISTIAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Deposition of a film with a high dielectric constant using tetrakis(ethylamino)silane as the silicon source, for the fabrication of MOS type field effect transistors</title><date>2005-12-09</date><risdate>2005</risdate><abstract>Deposition of a film with a high dielectric constant from tetrakis(ethylamino)silane (TEAS) acting as the source of silicon is carried out with the aid of a chemical vapour deposition (CVD) or ALD process, by injection of a metal precursor, an oxidising source and TEAS in conditions of duration, temperature and pressure such that the reactivity of the silicon source is augmented.
Selon l'invention on réalise l'injection d'un précurseur métallique de type MX4 ou MX5, M étant de préférence du Hafnium, d'un oxydant (notamment H2O) et du TEAS (comme source de silicium), dans des conditions de température, de pression et de ratio entre ces différents composés tels que la réactivité de la source de silicium est augmentée.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Deposition of a film with a high dielectric constant using tetrakis(ethylamino)silane as the silicon source, for the fabrication of MOS type field effect transistors |
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