Deposition of a film with a high dielectric constant using tetrakis(ethylamino)silane as the silicon source, for the fabrication of MOS type field effect transistors

Deposition of a film with a high dielectric constant using tetrakis(ethylamino)silane as the silicon source, for the fabrication of MOS type field effect transistors

Deposition of a film with a high dielectric constant from tetrakis(ethylamino)silane (TEAS) acting as the source of silicon is carried out with the aid of a chemical vapour deposition (CVD) or ALD process, by injection of a metal precursor, an oxidising source and TEAS in conditions of duration, tem...

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Bibliographische Detailangaben
1. Verfasser: DUSSARAT CHRISTIAN
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:Deposition of a film with a high dielectric constant from tetrakis(ethylamino)silane (TEAS) acting as the source of silicon is carried out with the aid of a chemical vapour deposition (CVD) or ALD process, by injection of a metal precursor, an oxidising source and TEAS in conditions of duration, temperature and pressure such that the reactivity of the silicon source is augmented. Selon l'invention on réalise l'injection d'un précurseur métallique de type MX4 ou MX5, M étant de préférence du Hafnium, d'un oxydant (notamment H2O) et du TEAS (comme source de silicium), dans des conditions de température, de pression et de ratio entre ces différents composés tels que la réactivité de la source de silicium est augmentée.