DISPOSITIF SEMI-CONDUCTEUR A TRANSISTORS MOS A COUCHE D'ARRET DE GRAVURE AYANT UN STRESS RESIDUEL AMELIORE ET PROCEDE DE FABRICATION D'UN TEL DISPOSITIF SEMI-CONDUCTEUR

A MOS transistor semiconductor device comprises a semiconductor substrate in which the transistors are formed, a dielectric layer covering the substrate in which the contact holes (16) are engraved and an engraving stop layer (18) interposed between the substrate and the dielectric layer. The engrav...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	REGOLINI JORGE, MORIN PIERRE
Format:	Patent
Sprache:	fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!