Synthesis of indium phosphide for production of e.g. optoelectronic instruments comprises use of direct process from indium and phosphorus in completely closed reaction system

Indium phosphide is synthesized from indium and phosphors by a direct process in a completely closed reaction system using a reactor in which at least two containers are used one inside the other. Indium phosphide is synthesized from indium and phosphors by a direct process in a completely closed re...

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Bibliographische Detailangaben
Hauptverfasser:	GUADALUPI GUISEPPE, MEREGALLI LETIZIA, DANIELI FRANCO
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Indium phosphide is synthesized from indium and phosphors by a direct process in a completely closed reaction system using a reactor in which at least two containers are used one inside the other. Indium phosphide is synthesized from indium and phosphors by a direct process in a completely closed reaction system sing a reactor in which at least two containers are used one inside the other. The temperature and the pressure is brought to a maximum value of 1070-1250 (preferably 1100-1200) deg C and 1850-2000 bars respectively with a constant temperature increase w.r.t time according to the formula y = kx, where y is the temperature in deg C, x is the time in minutes and k is a constant with a vale of 5-20 deg C/minute. La présente invention concerne un procédé de synthèse directe de phosphure d'indium à partir d'indium et de phosphore. Dans ce procédé, on effectue cette synthèse dans un système réactionnel totalement fermé, en employant un réacteur où il y a au moins deux récipients, disposés l'un dans l'autre, et l'on porte ce système à une température maximale de 1070 à 1250 degreC, de préférence de 1100 à 1200 degreC, sous une pression maximale de 185 à 200 MPa, en faisant en sorte que la température s'élève à une vitesse constante valant de 5 à 20 degreC/ min.