Transistor à effet de champ à grille isolée, et procédé de fabrication correspondant

The transistor includes a channel region which extends longitudinally between the drain and source, under the grid (6) of the transistor. This channel region includes several longitudinal depressions (8a). The depressions (8a) are filled with a material from the grid region, so that the grid materia...

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1. Verfasser:	HAOND MICHEL
Format:	Patent
Sprache:	fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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