Transistor à effet de champ à grille isolée, et procédé de fabrication correspondant

The transistor includes a channel region which extends longitudinally between the drain and source, under the grid (6) of the transistor. This channel region includes several longitudinal depressions (8a). The depressions (8a) are filled with a material from the grid region, so that the grid materia...

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Bibliographische Detailangaben
1. Verfasser:	HAOND MICHEL
Format:	Patent
Sprache:	fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	The transistor includes a channel region which extends longitudinally between the drain and source, under the grid (6) of the transistor. This channel region includes several longitudinal depressions (8a). The depressions (8a) are filled with a material from the grid region, so that the grid material is interdigitated with the channel region. The crenellated structure has the effect of increasing the effective width (W) of the transistor channel. The depressions may either consist of a series of alternating linear ribs and grooves, or of a number of concentric annular grooves with annular ribs separating them.