Heterojunction bipolar transistor with buried sub-collector/collector

The invention relates to a heterojunction bipolar transistor, the sub-collector/collector of which is buried in a semi-insulating material, so as to reduce the base/collector capacitance Cbc. This transistor has a first mesa, formed by the layers (2 to 6) of the transistor itself, surrounded at its...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MAUREL PHILIPPE, GARCIA JEANARLES, BLANCK HERVE
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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