DISPOSITIF DE MEMOIRE A SEMICONDUCTEUR AYANT UN CONDENSATEUR ET PROCEDE POUR SA FABRICATION

Disclosed are a semiconductor memory device and method for manufacturing the same. The method includes a process for manufacturing a capacitor performed by the steps of forming a first conductive layer on a semiconductor substrate, forming a first pattern composed of a 1st first-material layer on th...

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Bibliographische Detailangaben
1. Verfasser: JI-HONG AHN
Format: Patent
Sprache:fre
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Zusammenfassung:Disclosed are a semiconductor memory device and method for manufacturing the same. The method includes a process for manufacturing a capacitor performed by the steps of forming a first conductive layer on a semiconductor substrate, forming a first pattern composed of a 1st first-material layer on the first conductive layer, forming a first sidewall spacer composed of 1st second-material layer on the resultant structure, and etching the material layer under the first sidewall spacer, using the first sidewall spacer as an etch-mask. The semiconductor memory device thus manufactured can be highly integrated and is highly reliable.