PROCEDE DE REALISATION DE LASERS SEMI-CONDUCTEURS ET LASERS OBTENUS PAR LE PROCEDE

PCT No. PCT/FR89/00062 Sec. 371 Date Jul. 24, 1990 Sec. 102(e) Date Jul. 24, 1990 PCT Filed Dec. 5, 1989 PCT Pub. No. WO90/06608 PCT Pub. Date Jun. 14, 1990.The present invention relates to processes for the construction of semiconductor lasers. The process according to the invention is essentially characterized in that it consists in forming a layer 1 of a laser semiconductor active medium, in forming an optical cavity 2 associated with this layer, in disposing, on at least a part of the surface of the layer, first 6 and second 7 layers of materials of impurities of opposite polarities, in causing diffusion into the active medium of at least a part of the two materials of impurities to form, in the first layer, a cylinder 8 axis substantially parallel to the axis of the optical cavity and formed of two semi-cylindrical half-shells 9, 10 of diffused impurities of opposite polarities, and in connecting two conductors 12 of the electrical energy respectively to the two half-shells. Application to the construction of a plurality of laser diodes on one and the same support substrate, to create a homogeneous and dense single laser beam.