MATRICE PHOTOSENSIBLE A TRANSFERT DE TRAME D.T.C., AVEC UN SYSTEME ANTIEBLOUISSEMENT VERTICAL, ET PROCEDE DE FABRICATION D'UNE TELLE MATRICE
The photosensitive matrix (1) comprises, conventionally, a p-type semiconductor substrate (2), an n-type channel layer (4) which is separated by narrow isolating zones (41) into a plurality of columns (40), and an array (6) of transfer grids extending perpendicularly to the isolating zones (41) divi...
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Zusammenfassung: | The photosensitive matrix (1) comprises, conventionally, a p-type semiconductor substrate (2), an n-type channel layer (4) which is separated by narrow isolating zones (41) into a plurality of columns (40), and an array (6) of transfer grids extending perpendicularly to the isolating zones (41) dividing the columns (40) into a multiplicity of "pixels", on a thin insulating oxide layer (5) placed on the channel layer (4). According to the invention, the matrix (1) comprises, between the substrate (2) and the channel layer (4), a weakly doped p-type base layer (3) in which are buried anti-blooming diodes composed of a narrow, strongly doped n-type drain (32) extending parallel to the isolating zones (41). A strongly doped p-type protection screen (33) is built up under the drain (32). The arrangement procures an optical aperture of the matrix close to 1, and a spectral yield which is improved towards the red, thanks to the thickness of the base layer (3). |
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