CIRCUIT D'OUVERTURE RAPIDE POUR TRANSISTOR A EFFET DE CHAMP A MODULATION DE CONDUCTIVITE

CIRCUIT D'OUVERTURE RAPIDE POUR TRANSISTOR A EFFET DE CHAMP A MODULATION DE CONDUCTIVITE

UN CIRCUIT DE COMMUTATION RAPIDE A L'OUVERTURE DESTINE A UN TRANSISTOR A EFFET DE CHAMP A MODULATION DE CONDUCTIVITE, OU COMFET, Q1 EVITE LA CIRCULATION DE COURANTS DE VERROUILLAGE DESTRUCTEURS. UN COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE REDUITE EST APPLIQUE Q3 A L'ELECT...

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1. Verfasser: HAROLD ROBERT RONAN JR ET CARL FRANKLIN WHEATLEY JR
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Sprache:fre
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BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
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creator HAROLD ROBERT RONAN JR ET CARL FRANKLIN WHEATLEY JR
description UN CIRCUIT DE COMMUTATION RAPIDE A L'OUVERTURE DESTINE A UN TRANSISTOR A EFFET DE CHAMP A MODULATION DE CONDUCTIVITE, OU COMFET, Q1 EVITE LA CIRCULATION DE COURANTS DE VERROUILLAGE DESTRUCTEURS. UN COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE REDUITE EST APPLIQUE Q3 A L'ELECTRODE DE GRILLE DU COMFET PENDANT LA PARTIE INITIALE DE LA COMMUTATION A L'OUVERTURE. LORSQUE LA TENSION SOURCE-DRAIN DU COMFET EST DEVENUE PLUS GRANDE QUE L'INTERVALLE DES BASSES TENSIONS SOURCE-DRAIN POUR LESQUELLES UN VERROUILLAGE PEUT SE PRODUIRE AVEC UN COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE ACCRUE, CE COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE ACCRUE EST APPLIQUE Q4 A L'ELECTRODE DE GRILLE DU COMFET. A fast switch-off circuit for a conductivity modulated field effect transistor (COMFET) avoids the flow of destructive latch-up currents. A reduced-amplitude switch-off current is applied to the gate electrode of the COMFET during the initial portion of switch-off. When the source-to-drain voltage (VDS) of the COMFET has become larger than the range of low VDS voltage in which latch-up can occur for an increased-amplitude switch-off current being applied to the gate electrode of the COMFET, that increased-amplitude switch-off current is applied to the gate electrode of the COMFET.
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UN COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE REDUITE EST APPLIQUE Q3 A L'ELECTRODE DE GRILLE DU COMFET PENDANT LA PARTIE INITIALE DE LA COMMUTATION A L'OUVERTURE. LORSQUE LA TENSION SOURCE-DRAIN DU COMFET EST DEVENUE PLUS GRANDE QUE L'INTERVALLE DES BASSES TENSIONS SOURCE-DRAIN POUR LESQUELLES UN VERROUILLAGE PEUT SE PRODUIRE AVEC UN COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE ACCRUE, CE COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE ACCRUE EST APPLIQUE Q4 A L'ELECTRODE DE GRILLE DU COMFET. A fast switch-off circuit for a conductivity modulated field effect transistor (COMFET) avoids the flow of destructive latch-up currents. A reduced-amplitude switch-off current is applied to the gate electrode of the COMFET during the initial portion of switch-off. When the source-to-drain voltage (VDS) of the COMFET has become larger than the range of low VDS voltage in which latch-up can occur for an increased-amplitude switch-off current being applied to the gate electrode of the COMFET, that increased-amplitude switch-off current is applied to the gate electrode of the COMFET.</description><edition>4</edition><language>fre</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; PULSE TECHNIQUE</subject><creationdate>1987</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19871002&amp;DB=EPODOC&amp;CC=FR&amp;NR=2596594A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19871002&amp;DB=EPODOC&amp;CC=FR&amp;NR=2596594A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAROLD ROBERT RONAN JR ET CARL FRANKLIN WHEATLEY JR</creatorcontrib><title>CIRCUIT D'OUVERTURE RAPIDE POUR TRANSISTOR A EFFET DE CHAMP A MODULATION DE CONDUCTIVITE</title><description>UN CIRCUIT DE COMMUTATION RAPIDE A L'OUVERTURE DESTINE A UN TRANSISTOR A EFFET DE CHAMP A MODULATION DE CONDUCTIVITE, OU COMFET, Q1 EVITE LA CIRCULATION DE COURANTS DE VERROUILLAGE DESTRUCTEURS. UN COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE REDUITE EST APPLIQUE Q3 A L'ELECTRODE DE GRILLE DU COMFET PENDANT LA PARTIE INITIALE DE LA COMMUTATION A L'OUVERTURE. LORSQUE LA TENSION SOURCE-DRAIN DU COMFET EST DEVENUE PLUS GRANDE QUE L'INTERVALLE DES BASSES TENSIONS SOURCE-DRAIN POUR LESQUELLES UN VERROUILLAGE PEUT SE PRODUIRE AVEC UN COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE ACCRUE, CE COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE ACCRUE EST APPLIQUE Q4 A L'ELECTRODE DE GRILLE DU COMFET. A fast switch-off circuit for a conductivity modulated field effect transistor (COMFET) avoids the flow of destructive latch-up currents. A reduced-amplitude switch-off current is applied to the gate electrode of the COMFET during the initial portion of switch-off. 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UN COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE REDUITE EST APPLIQUE Q3 A L'ELECTRODE DE GRILLE DU COMFET PENDANT LA PARTIE INITIALE DE LA COMMUTATION A L'OUVERTURE. LORSQUE LA TENSION SOURCE-DRAIN DU COMFET EST DEVENUE PLUS GRANDE QUE L'INTERVALLE DES BASSES TENSIONS SOURCE-DRAIN POUR LESQUELLES UN VERROUILLAGE PEUT SE PRODUIRE AVEC UN COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE ACCRUE, CE COURANT DE COMMUTATION A L'OUVERTURE D'AMPLITUDE ACCRUE EST APPLIQUE Q4 A L'ELECTRODE DE GRILLE DU COMFET. A fast switch-off circuit for a conductivity modulated field effect transistor (COMFET) avoids the flow of destructive latch-up currents. A reduced-amplitude switch-off current is applied to the gate electrode of the COMFET during the initial portion of switch-off. When the source-to-drain voltage (VDS) of the COMFET has become larger than the range of low VDS voltage in which latch-up can occur for an increased-amplitude switch-off current being applied to the gate electrode of the COMFET, that increased-amplitude switch-off current is applied to the gate electrode of the COMFET.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record>
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recordid cdi_epo_espacenet_FR2596594A1
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subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
title CIRCUIT D'OUVERTURE RAPIDE POUR TRANSISTOR A EFFET DE CHAMP A MODULATION DE CONDUCTIVITE
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