Semiconductor laser allowing stimulated emission of light in the ultraviolet and the visible

Semiconductor laser allowing stimulated emission of light in the ultraviolet and the visible, including a structure 2 formed of at least one silicon oxide layer 6, 10 juxtaposed with at least one silicon layer 8, 12 whose thickness is such that this silicon layer 8, 12 behaves like a resonant cavity...

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Bibliographische Detailangaben
1. Verfasser:	BRUNO BLANCHARD ET PIERRE JULIET
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Semiconductor laser allowing stimulated emission of light in the ultraviolet and the visible, including a structure 2 formed of at least one silicon oxide layer 6, 10 juxtaposed with at least one silicon layer 8, 12 whose thickness is such that this silicon layer 8, 12 behaves like a resonant cavity, and means for exciting the structure 2, such as a source 18 emitting a photon beam 20 irradiating the structure 2 and enabling a laser effect 16 to be produced therein. LASER A SEMI-CONDUCTEURS PERMETTANT UNE EMISSION STIMULEE DE LUMIERE DANS L'ULTRAVIOLET ET LE VISIBLE, COMPORTANT UNE STRUCTURE 2 FORMEE D'AU MOINS UNE COUCHE D'OXYDE DE SILICIUM 6, 10 JUXTAPOSEE A AU MOINS UNE COUCHE DE SILICIUM 8, 12 DONT L'EPAISSEUR EST TELLE QUE CETTE COUCHE DE SILICIUM 8, 12 SE COMPORTE COMME UNE CAVITE RESONNANTE, ET DES MOYENS D'EXCITATION DE LA STRUCTURE 2 TELS QU'UNE SOURCE 18 EMETTANT UN FAISCEAU DE PHOTONS 20 IRRADIANT LA STRUCTURE 2 ET PERMETTANT D'Y PRODUIRE UN EFFET LASER 16.