PHOTODETECTEUR INFRAROUGE COMPRENANT UNE COUCHE EPITAXIALE DE TELLURURE DE CADMIUM ET DE MERCURE ET SON PROCEDE DE FABRICATION

PHOTODETECTEUR INFRAROUGE COMPRENANT UNE COUCHE EPITAXIALE DE TELLURURE DE CADMIUM ET DE MERCURE ET SON PROCEDE DE FABRICATION

A cadmium mercury telluride (C.M.T.) layer (5) is epitaxially grown on a substrate (1, 2) of, for example, cadmium telluride. The substrate (3) is subsequently etched away with a mixture of nitric, hydrofluoric and lactic acids. A thin barrier layer (3) of mercury telluride is provided which is not...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: MALCOLM JOHN BEVAN, SURENDRA PRATAP SINGH, MICHAEL JAMES HYLIANDS, LINDA KAY NICHOLSON ET ANDREW WILLIAM GURNELL
Format: Patent
Sprache:fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A cadmium mercury telluride (C.M.T.) layer (5) is epitaxially grown on a substrate (1, 2) of, for example, cadmium telluride. The substrate (3) is subsequently etched away with a mixture of nitric, hydrofluoric and lactic acids. A thin barrier layer (3) of mercury telluride is provided which is not attacked by the above etching solution. This barrier layer is removed by polishing to leave an optically flat C.M.T. layer which may incorporate a cadmium telluride passivating layer on its surface.