Crystal-growing furnace

The furnace according to the invention comprises a resistor 22 which has a central passage 24 in which a crucible 2 containing the material to be produced travels. The resistor 22 has a variable cross-section in order to provide a variable heating and to create a heat gradient. This arrangement make...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	DENIS CAMEL, JEAN-JACQUES FAVIER ET ANDRE ROUZAUD
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The furnace according to the invention comprises a resistor 22 which has a central passage 24 in which a crucible 2 containing the material to be produced travels. The resistor 22 has a variable cross-section in order to provide a variable heating and to create a heat gradient. This arrangement makes it possible to obtain a uniform temperature in a cross-section of the crucible. Application to the production of single crystals by the Bridgman method. FOUR DE CRISTALLOGENESE.LE FOUR SELON L'INVENTION COMPORTE UN RESISTOR 22 PRESENTANT UN PASSAGE CENTRAL 24 DANS LEQUEL SE DEPLACE UN CREUSET 2 CONTENANT LE MATERIAU A ELABORER. LE RESISTOR 22 PRESENTE UNE SECTION VARIABLE AFIN D'ASSURER UN CHAUFFAGE VARIABLE ET CREER UN GRADIENT THERMIQUE. CETTE DISPOSITION PERMET D'OBTENIR UNE TEMPERATURE HOMOGENE DANS UNE SECTION DROITE DU CREUSET.APPLICATION A L'ELABORATION DE MONOCRISTAUX PAR LA METHODE DE BRIDGMANN.