PERFECTIONNEMENTS AUX REACTEURS EPITAXIQUES

Reactor for the deposition of epitaxial coatings from the vapour phase receives the power for the medium frequency induction heating from a generator and transistorised rectifiers. Its transparent quartz bell has several reflectors for the energy reflected by the retainer of the silicon wafers. The...

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Bibliographische Detailangaben
1. Verfasser:	VITTORIO POZZETTI, FRANO PRETI ET PIERGIOVANNI POGGI
Format:	Patent
Sprache:	fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Reactor for the deposition of epitaxial coatings from the vapour phase receives the power for the medium frequency induction heating from a generator and transistorised rectifiers. Its transparent quartz bell has several reflectors for the energy reflected by the retainer of the silicon wafers. The reflectors are made of a material which can reflect the peak emission wavelengths of the retainer and have a min. of coupling with the electromagnetic field of the inductor.