Epitaxial reactor for silicon wafers

Reactor for the deposition of epitaxial coatings from the vapour phase receives the power for the medium frequency induction heating from a generator and transistorised rectifiers. Its transparent quartz bell has several reflectors for the energy reflected by the retainer of the silicon wafers. The...

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Bibliographische Detailangaben
1. Verfasser:	VITTORIO POZZETTI, FRANO PRETI ET PIERGIOVANNI POGGI
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Reactor for the deposition of epitaxial coatings from the vapour phase receives the power for the medium frequency induction heating from a generator and transistorised rectifiers. Its transparent quartz bell has several reflectors for the energy reflected by the retainer of the silicon wafers. The reflectors are made of a material which can reflect the peak emission wavelengths of the retainer and have a min. of coupling with the electromagnetic field of the inductor. L'INVENTION CONCERNE UN REACTEUR EPITAXIQUE DONT LE CHAUFFAGE EST ASSURE PAR INDUCTION, A MOYENNE FREQUENCE, PAR UN ENROULEMENT 30. POUR LA RECUPERATION DE LA CHALEUR ET SON REVOI VERS LE SUSCEPTEUR, UNE PLURALITE DE SECTEURS D'ECRAN 37 EST DISPOSEE POUR FORMER UNE ENVELOPPE REFLECHISSANTE CYLINDRIQUE COAXIALE AU SUSCEPTEUR.