COMPOSANTS ET RESEAUX EN SILICIUM POUR LA DETECTION DE LUMIERE INFRAROUGE

COMPOSANTS ET RESEAUX EN SILICIUM POUR LA DETECTION DE LUMIERE INFRAROUGE

An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p+-silicon with a doping density in the range of 5x1018 to 5x1019 (atoms per cm3) a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: MAX KONIGER ET GERHART MULLER
Format: Patent
Sprache:fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p+-silicon with a doping density in the range of 5x1018 to 5x1019 (atoms per cm3) and a thickness in the range of 50 to 200 Angstroms. On top of this layer (3) a metal layer (2) for example of platinum is deposited and partially alloyed into layer (3) to form PtSi. Such elements are arranged in arrays and may be combined with other detector elements having their sensitivity in other spectrum ranges, e.g., 3 to 5 microns and/or in the visible spectrum range.