PHOTODETECTEUR A AVALANCHE FONCTIONNANT A DES LONGUEURS D'ONDE ELEVEES

PHOTODETECTEUR A AVALANCHE FONCTIONNANT A DES LONGUEURS D'ONDE ELEVEES

An avalanche photodetector useful at wavelengths as long as 1.7 microns with low noise is achieved. The crystal used includes successive layers of p-type indium phosphide, n-type indium phosphide, and n-type indium gallium arsenide. An appropriate total of fixed charges in the n-type indium phosphid...

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Bibliographische Detailangaben
1. Verfasser: STEPHEN ROSS FORREST, OCK-KY KIM ET RICHARD GRANT SMITH
Format: Patent
Sprache:fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:An avalanche photodetector useful at wavelengths as long as 1.7 microns with low noise is achieved. The crystal used includes successive layers of p-type indium phosphide, n-type indium phosphide, and n-type indium gallium arsenide. An appropriate total of fixed charges in the n-type indium phosphide and a graded bandgap heterointerface region are important for the improved results.