PHOTOPILE SOLAIRE

The invention relates to a solar cell in which there is arranged, between the layers (2 and 4) of a semiconductor having a narrow band gap and a semiconductor having a wide band gap, an interlayer (3) of a semiconductor having a variable composition, which is of the same conductivity type as the sem...

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Bibliographische Detailangaben
1. Verfasser:	ZHORES IVANOVICH ALFEROV, VYACHESLAV MIKHAILOVICH ANDREEV, DMITRY ZALMANOVICH GARBUZOV, MARLEN BORISOVICH KAGAN, VLADIMIR ILICH KOROLKOV, VALERY DMITRIEVICH RUMYANTSEV, VALERY ROMANOVICH LARIONOV, OLEG VLADIMIROVICH SULIMA, TATYANA ARKADIEVNA NULLER, BORIS VASILIEVICH EGOROV, OLGA MIKHAILOVNA FEDOROVA, VLADIMIR MIKHAILOVICH LANTRATOV
Format:	Patent
Sprache:	fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention relates to a solar cell in which there is arranged, between the layers (2 and 4) of a semiconductor having a narrow band gap and a semiconductor having a wide band gap, an interlayer (3) of a semiconductor having a variable composition, which is of the same conductivity type as the semiconductor having the wide band gap. The current collection contacts (8) are arranged in grooves (7) which are provided on the surface (5) to be irradiated of the solar cell and have a depth which exceeds the thickness of the layer (4) of the semiconductor having the wide band gap. The width of the forbidden zone of the semiconductor of the interlayer (3) has, at the boundary with the layer (4) of the semiconductor having the wide band gap, a minimum value which is smaller by at least 3 kT than the maximum width of the forbidden zone of the semiconductor having the wide band gap, k being the Boltzmann constant and T being the operating temperature of the solar cell, and is greater than the width of the forbidden zone of the semiconductor having the narrow band gap. The interlayer (3) is transparent for radiation having an energy which is equal to the minimum value of the width of the forbidden zone of this layer, the thickness of the layer (4) of the semiconductor having the wide band gap not being larger than the diffusion length of the minority carriers in said layer (4). DANS UNE PHOTOPILE SOLAIRE, ENTRE DES COUCHES SEMI-CONDUCTRICES 2, 4 A BANDES INTERDITES DE HAUTEUR FAIBLE ET ELEVEE, EST PREVUE UNE COUCHE SEMI-CONDUCTRICE INTERMEDIAIRE 3 DE MEME TYPE DE CONDUCTIVITE QUE CELUI DE LA COUCHE 4. DES CONTACTS 8 DE PRISE DE COURANT, SITUES DANS DES RAINURES 7 DE LA SURFACE IRRADIEE 5 SONT PLUS PROFONDS QUE L'EPAISSEUR DE LA COUCHE 4 ET LA LARGEUR DE LA BANDE INTERDITE DU MATERIAU DE LA COUCHE 3 EST MINIMALE A L'INTERFACE DE CELLE-CI ET DE LA COUCHE 4 ET INFERIEURE A LA LARGEUR MAXIMALE DE LA BANDE INTERDITE DU MATERIAU DE LA COUCHE 4 D'UNE VALEUR EGALE A AU MOINS 3KT (K CONSTANTE DE BOLTZMANN ET T TEMPERATURE DE FONCTIONNEMENT DE LA PHOTOPILE) ET SUPERIEURE A LA LARGEUR DE LA BANDE INTERDITE DU MATERIAU DE LA COUCHE 3.