Alkylating highly disperse silicon dioxide - after steaming to desired degree of wetting
Highly disperse SiO2-alkyl prods. (I) are prepd. by alkylating highly disperse SiO2 with alkyl chlorosilane vapours in a turbulent layer process. SiO2-alkyl prod. obtd. is then sepd. from the gaseous reaction prods. at 390-400 degrees C. The novelty is that the highly disperse SiO2 is steam treated...
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Sprache: | eng ; fre |
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Zusammenfassung: | Highly disperse SiO2-alkyl prods. (I) are prepd. by alkylating highly disperse SiO2 with alkyl chlorosilane vapours in a turbulent layer process. SiO2-alkyl prod. obtd. is then sepd. from the gaseous reaction prods. at 390-400 degrees C. The novelty is that the highly disperse SiO2 is steam treated at 110-120 degrees C before alkylation. Steaming is continued until degree of wetting of SiO2 is 2-40 mk mol. H2O/m2 SiO2. Subsequent alkylation takes place at 250-310 degrees C, e.g. for 5-15 min. (I) having alkyl gp. degree of grafting 8 mg mol./m2 SiO2 are used as fillers for silicone rubbers without use of stabilisers. Prods. having alkyl gp. degree of grafting 6.7 mk mol./m2 SiO2 can be used as thickeners for lubricating greases. With alkyl gp. degree of grafting of 4.7 mk. mol./m2 SiO2, prods. can be used as additives which prevent caking together of NH4NO3, and as fillers for lacquers and paints. The alkyl gp. degree of grafting on SiO2 surface can be controlled. Wetting forms a hydrate layer on SiO2 surface. On treatment with alkyl chlorosilane vapours, triple bond Si-CL are hydrolysed to triple bond Si-OH gps., which can then react with OH gps. of SiO2 surface under gentler conditions, e.g. 250 degrees C, 15 min., instead of 400 degrees C, 0.5 hrs. |
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